BFG25A/X,215 NXP Semiconductors, BFG25A/X,215 Datasheet - Page 6

• Manufacturer Part Number: BFG25A/X,215
• Description: TRANS NPN 5V 5GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG25A/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50 @ 0.5 mA @ 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.0065 A
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934008590215; BFG25A/X T/R; BFG25A/X T/R

NXP Semiconductors
handbook, halfpage
handbook, full pagewidth
NPN 5 GHz wideband transistor
V
I
C
CE
Fig.10 Minimum noise figure as a function of
= 1 mA; V
(dB)
F
= 1 V.
4
3
2
1
0
10
1
collector current; typical values.
CE
= 1 V; f = 500 MHz; Z
+
– j
j
1
Fig.12 Common emitter noise figure circles; typical values.
0
O
0.2
0.2
= 50
1 GHz
500 MHz
I C (mA)
f = 2 GHz
Maximum stable gain = 15.6 dB; F
0.5
0.5
0.2
MCD145
Rev. 04 - 27 November 2007
10
15.6 dB
MSG
0.5
14 dB
1
1
1
handbook, halfpage
min
V
CE
Fig.11 Minimum noise figure as a function of
(dB)
2
= 1.9 dB;
F
= 1 V.
6 dB
4
3
2
1
0
10
2.5 dB
4 dB
2
frequency; typical values.
2
2
5
opt
= 0.85, 5 ; R
10
*
MCD147
5
5
10
10
n
stability
/50 = 2.4.
circle
F
10
min
OPT
3
= 1.9 dB
I C = 2 mA
1 mA
0.5 mA
f (MHz)
Product specification
BFG25A/X
MCD146
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