BFG25A/X,215 NXP Semiconductors, BFG25A/X,215 Datasheet - Page 3

• Manufacturer Part Number: BFG25A/X,215
• Description: TRANS NPN 5V 5GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG25A/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50 @ 0.5 mA @ 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.0065 A
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934008590215; BFG25A/X T/R; BFG25A/X T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Note
1. G
V
V
V
I
P
T
T
R
I
h
C
f
G
F
SYMBOL
SYMBOL
SYMBOL
C
j
CBO
T
FE
stg
j
CBO
CEO
EBO
tot
th j-s
= 25 C unless otherwise specified.
re
NPN 5 GHz wideband transistor
UM
s
s
UM
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
is the maximum unilateral power gain, assuming S
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point note 1
collector leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
PARAMETER
PARAMETER
PARAMETER
open emitter
open base
open collector
T
I
I
I
I
T
I
f = 1 GHz; T
I
I
Rev. 04 - 27 November 2007
E
C
C
C
C
C
C
s
amb
=
=
= 0; V
= 0.5 mA; V
= i
= 1 mA; V
= 0.5 mA; V
= 0.5 mA; V
= 1 mA; V
165 C; note 1
c
= 25 C; f = 500 MHz
opt
opt
= 0; V
; T
; T
CB
amb
amb
= 5 V
CONDITIONS
CONDITIONS
amb
CB
CE
CE
12
= 25 C
= 25 C
CE
CE
CE
is zero and
= 1 V; f = 1 MHz
= 1 V;
= 1 V; f = 1 GHz;
= 25 C
= 1 V
= 1 V;
= 1 V; f = 1 GHz;
CONDITIONS
G
UM
=
10 log
50
3.5
MIN.
65
MIN.
------------------------------------------------------------- - dB
VALUE
1
320
–
S
80
0.21
5
18
1.8
2
TYP.
11
8
5
2
6.5
32
150
175
Product specification
S
2
MAX.
21
BFG25A/X
1
2
50
200
0.3
MAX.
–
S
22
3 of 12
UNIT
K/W
V
V
V
mA
mW
C
C
2
UNIT
pF
GHz
dB
dB
dB
UNIT
A