BFT93W,115 NXP Semiconductors, BFT93W,115 Datasheet - Page 7

• Manufacturer Part Number: BFT93W,115
• Description: TRANS PNP 12V 50MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFT93W,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 4GHz
• Noise Figure (db Typ @ F): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 30mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 20 @ 30mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 4000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934022970115; BFT93W T/R; BFT93W T/R

NXP Semiconductors
March 1994
PNP 4 GHz wideband transistor
V
V
CE
CE
= 10 V; I
= 10 V; I
C
C
= 30 mA.
= 30 mA.
Fig.12 Common emitter reverse transmission coefficient (s
Fig.13 Common emitter output reflection coefficient (s
180
180
o
0.5
o
0
135
135
0.4
135
135
0.2
0.2
o
o
o
o
0.3
0.2
0.5
0.5
0.2
0.5
0.1
3 GHz
40 MHz
90
90
7
90
90
o
o
1
1
1
o
o
3 GHz
2
2
2
40 MHz
5
45
45
22
45
), typical values.
o
o
45
12
MLB436
o
), typical values.
o
5
5
MLB437
0
o
0
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFT93W