BFT93W,115 NXP Semiconductors, BFT93W,115 Datasheet
BFT93W,115
Specifications of BFT93W,115
BFT93W T/R
BFT93W T/R
Related parts for BFT93W,115
BFT93W,115 Summary of contents
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DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 DISCRETE SEMICONDUCTORS March 1994 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor FEATURES High power gain Gold metallization ensures excellent reliability SOT323 (S-mini) package. APPLICATIONS It is intended as a general purpose transistor for wideband applications GHz. QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage ...
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... NXP Semiconductors PNP 4 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total power dissipation tot T storage temperature stg T junction temperature j THERMAL CHARACTERISTICS ...
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... NXP Semiconductors PNP 4 GHz wideband transistor 400 P tot (mW) 300 200 100 100 Fig.2 Power derating as a function of the soldering point temperature (pF) 1.6 1.2 0.8 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage, typical values. March 1994 MLB424 150 200 MLB426 12 16 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor 30 gain (dB 500 MHz Fig.6 Gain as a function of collector current, typical values. 50 gain (dB MSG 10 mA Fig.8 Gain as a function of frequency, typical values. March 1994 MLB428 gain (dB) MSG (mA MLB430 gain (dB) G max (MHz Product specification ...
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... NXP Semiconductors PNP 4 GHz wideband transistor 180 = 30 mA Fig.10 Common emitter input reflection coefficient (s 180 = 30 mA Fig.11 Common emitter forward transmission coefficient (s March 1994 135 0.5 3 GHz 0.2 0.2 0 0.2 0.5 o 135 135 40 MHz o 3 GHz 135 Product specification 1 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor 0.5 o 180 = 30 mA Fig.12 Common emitter reverse transmission coefficient (s 180 = 30 mA Fig.13 Common emitter output reflection coefficient (s March 1994 135 0.4 0.3 0.2 0.1 40 MHz o 135 135 0.5 0.2 0.2 0 GHz 0.2 0.5 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor 6 F (dB Fig.14 Minimum noise figure as a function of collector current, typical values. March 1994 MLB432 (dB) 1 GHz 500 MHz (mA Fig.15 Minimum noise figure as a function of 8 Product specification (MHz) frequency, typical values. BFT93W MLB433 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor o 180 = 10 mA 500 MHz Fig.16 Common emitter noise figure circles, typical values. 180 = 10 mA GHz Fig.17 Common emitter noise figure circles, typical values. March 1994 135 0 2.40 dB min 0.2 Γ opt 0.2 0.5 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor SPICE parameters for the BFT93W crystal SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE XTF 27 VTF 28 ITF 29 PTF 30 CJC 31 VJC 32 MJC 33 XCJC 34 TR (1) 35 CJS March 1994 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor Table 1 Common emitter scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 20.5 40 0.759 49.0 100 0.711 88.0 200 0.630 113.6 300 0.586 130.5 400 0.566 141.8 500 0.557 150.5 600 0.551 157.1 700 0.546 162.7 800 0.543 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor Table 3 Common emitter scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 31.5 40 0.608 72.1 100 0.571 114.5 200 0.538 136.1 300 0.531 149.0 400 0.531 157.3 500 0.532 163.6 600 0.534 168.6 700 0.533 172.9 800 0.532 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor Table 5 Common emitter scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 49.1 40 0.450 99.1 100 0.475 135.9 200 0.502 151.8 300 0.516 161.1 400 0.526 167.1 500 0.530 171.9 600 0.534 175.7 700 0.535 179.1 800 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor Table 7 Common emitter scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 62.3 40 0.382 113.1 100 0.453 144.8 200 0.502 158.0 300 0.521 165.8 400 0.532 170.8 500 0.537 174.9 600 0.542 178.2 700 0.543 178.7 800 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor Table 9 Common emitter scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 16.8 40 0.837 40.2 100 0.781 73.9 200 0.670 98.6 300 0.592 116.1 400 0.547 128.7 500 0.523 138.6 600 0.507 146.1 700 0.495 152.5 800 0.487 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor Table 11 Common emitter scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 24.2 40 0.744 56.4 100 0.666 95.4 200 0.556 119.1 300 0.507 134.4 400 0.485 144.5 500 0.474 152.4 600 0.469 158.4 700 0.465 163.5 800 0.461 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor Table 13 Common emitter scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 33.6 40 0.655 73.8 100 0.568 113.4 200 0.487 134.1 300 0.463 146.7 400 0.456 154.7 500 0.453 161.0 600 0.453 165.7 700 0.451 169.9 800 0.451 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor Table 15 Common emitter scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 39.1 40 0.617 82.4 100 0.529 120.8 200 0.464 139.7 300 0.449 151.0 400 0.446 158.1 500 0.446 163.5 600 0.448 167.8 700 0.449 171.7 800 0.450 ...
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... NXP Semiconductors PNP 4 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 March 1994 scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...