BFS540,115 NXP Semiconductors, BFS540,115 Datasheet - Page 7

• Manufacturer Part Number: BFS540,115
• Description: TRANS NPN 15V 120MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS540,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 100 @ 40mA @ 8V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934021430115; BFS540 T/R; BFS540 T/R

NXP Semiconductors
2000 May 30
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
f = 900 MHz; Z
I
f = 2 GHz; Z
C
C
= 10 mA; V
= 10 mA; V
o
CE
CE
= 50 .
o
= 50 .
= 8 V;
= 8 V;
stability
circle
G max = 8.7 dB
pot. unst.
region
180°
180°
0
0
−135°
−135°
Γ MS
G = 8 dB
135°
135°
0.2
0.2
0.2
0.2
G = 7 dB
G = 6 dB
0.2
0.2
F min = 2. 1 dB
0.5
0.5
0.5
0.5
Γ OPT
F = 3 dB
F = 2 dB
Fig.12 Noise circle.
Fig.13 Noise circle.
0.5
0.5
F = 1.5 dB
F = 2.5 dB
F min = 1. 3 dB
Γ OPT
F = 3 dB
−90°
−90°
90°
90°
7
1
1
1
1
1
1
F = 4 dB
2
2
2
2
2
2
5
5
−45°
−45°
45°
45°
5
5
5
5
MRC079
MRC080
0°
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFS540