BFS540,115 NXP Semiconductors, BFS540,115 Datasheet
BFS540,115
Specifications of BFS540,115
BFS540 T/R
BFS540 T/R
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BFS540,115 Summary of contents
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DATA SHEET dbook, halfpage BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 DISCRETE SEMICONDUCTORS M3D102 2000 May 30 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT323 package. APPLICATIONS RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies GHz. ...
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... NXP Semiconductors NPN 9 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th j-s Note the temperature at the soldering point of the collector tab. s CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C emitter capacitance ...
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... NXP Semiconductors NPN 9 GHz wideband transistor 400 handbook, halfpage P tot (mW) 300 200 100 100 Fig.2 Power derating curve. 1 handbook, halfpage C re (pF) 0.8 0.6 0.4 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage. 2000 May 30 MRC008 - 1 handbook, halfpage h FE 150 200 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor In Figs maximum unilateral power gain; UM MSG = maximum stable gain; G gain. 20 handbook, halfpage G UM (dB 900 MHz; T amb Fig.6 Maximum unilateral power gain as a function of collector current. 50 handbook, halfpage gain (dB MSG −2 − mA amb Fig.8 Gain as a function of frequency. ...
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... NXP Semiconductors NPN 9 GHz wideband transistor 4 handbook, halfpage F (dB GHz 2 900 MHz 1 500 MHz amb Fig.10 Minimum noise figure as a function of collector current. 2000 May 30 MRC009 4 handbook, halfpage F (dB (mA Fig.11 Minimum noise figure as a function of 6 Product specification − (GHz ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth pot. unst. region 180° stability circle mA 900 MHz handbook, full pagewidth 180° G max = 8 mA GHz 2000 May 30 90° 1 135° 0.5 0.2 F min = Γ OPT 0.2 0.5 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° mA Fig.14 Common emitter input reflection coefficient (s handbook, full pagewidth 180° mA Fig.15 Common emitter forward transmission coefficient (s 2000 May 30 90° 1 135° 0.5 3 GHz 0.2 0.2 0 0.2 0.5 − ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° mA Fig.16 Common emitter reverse transmission coefficient (s handbook, full pagewidth 180° mA Fig.17 Common emitter output reflection coefficient (s 2000 May 30 90° 135° 40 MHz 0.5 0.4 0.3 0.2 0.1 − ...
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... NXP Semiconductors NPN 9 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 2000 May scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...