BFG540W/X,115 NXP Semiconductors, BFG540W/X,115 Datasheet - Page 3

• Manufacturer Part Number: BFG540W/X,115
• Description: TRANS WIDEBAND 9GHZ SOT-343 15V
• Manufacturer: NXP Semiconductors

Specifications of BFG540W/X,115

• Package / Case: SOT-343N
• Mounting Type: Surface Mount
• Power - Max: 500mW
• Current - Collector (ic) (max): 120mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Gain: 16dB
• Transistor Type: NPN
• Frequency - Transition: 9GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Noise Figure (db Typ @ F): 2.1dB @ 2GHz
• Dc Current Gain Hfe Max: 100 @ 40mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934032320115::BFG540W/X T/R::BFG540W/X T/R::Q2638421

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
2000 May 23
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CES
EBO
tot
NPN 9 GHz wideband transistor
th j-s
(mW)
V
P tot
CE
s
s
600
400
200
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
 10 V.
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
Fig.3 Power derating curve.
50
PARAMETER
100
PARAMETER
150
T
s
MBG248
( C)
o
open emitter
R
open collector
T
s
BE
200
 85 C; see Fig.3; note 1
= 0
CONDITIONS
3
T
s
 85 C; note 1
CONDITIONS
BFG540W/X; BFG540W/XR





65

MIN.
20
15
2.5
120
500
+150
175
VALUE
Product specification
MAX.
180
BFG540W
V
V
V
mA
mW
C
C
UNIT
UNIT
K/W