BFG67/X,215 NXP Semiconductors, BFG67/X,215 Datasheet - Page 7

• Manufacturer Part Number: BFG67/X,215
• Description: TRANS NPN 10V 8GHZ SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BFG67/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 380mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 15mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 380 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934007250215; BFG67/X T/R; BFG67/X T/R

NXP Semiconductors
BFG67/X
Noise Parameters
handbook, halfpage
500
0.95
(dB)
F
NPN 8 GHz wideband transistors
(MHz)
V
min
CE
(dB)
f
Fig.12 Minimum noise figure as a function of
F
= 8 V.
4
3
2
0
1
10
0.455
2
(mag)
Gamma (opt)
8
frequency.
V
(V)
CE
33.8
(ang)
5
10
(mA)
0.288
3
I
R
C
n
/50
I
15 mA
C
5 mA
f (MHz)
= 30 mA
MBB309
Z
O
= 50 .
10
Rev. 05 - 23 November 2007
4
j
j
0
0.2
0.2
0.5
0.5
0.2
Fig.13 Noise circle figure.
3 dB
BFG67; BFG67/X; BFG67/XR
0.5
2 dB
1.5 dB
1
1
1
F min =0.95 dB
OPT
2
stability
circle
Product specification
2
2
5
10
MBB317
7 of 14
5
5
10
10