BFS25A,115 NXP Semiconductors, BFS25A,115 Datasheet - Page 9

• Manufacturer Part Number: BFS25A,115
• Description: TRANS NPN 5V 6.5MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS25A,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 0.5mA @ 1V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 6.5 mA
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934021360115; BFS25A T/R; BFS25A T/R

NXP Semiconductors
December 1997
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistor
I
I
Z
C
C
o
= 1 mA; V
= 1 mA; V
= 50 .
CE
CE
= 1 V.
= 1 V;
Fig.17 Common emitter reverse transmission coefficient (S
180°
180°
Fig.18 Common emitter output reflection coefficient (S
0.5
0
−135°
−135°
0.4
135°
135°
0.2
0.2
0.2
0.3
0.5
0.5
0.2
0.5
0.1
−90°
−90°
90°
90°
9
1
1
1
40 MHz
3 GHz
3 GHz
2
2
2
5
−45°
40 MHz
45°
−45°
45°
5
5
MRC055
MRC054
22
0°
).
0°
12
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFS25A