BFS25A,115 NXP Semiconductors, BFS25A,115 Datasheet - Page 3

• Manufacturer Part Number: BFS25A,115
• Description: TRANS NPN 5V 6.5MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS25A,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 0.5mA @ 1V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 6.5 mA
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934021360115; BFS25A T/R; BFS25A T/R

NXP Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Note
1. G
December 1997
R
I
h
C
f
G
F
SYMBOL
j
CBO
T
FE
= 25 C, unless otherwise specified.
NPN 5 GHz wideband transistor
th j-s
re
SYMBOL
UM
G
s
UM
is the temperature at the soldering point of the collector tab.
UM
is the maximum unilateral power gain, assuming S
=
collector cut-off current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power
gain (note 1)
noise figure
10 log
thermal resistance from junction to
soldering point
PARAMETER
--------------------------------------------------------- - dB.

1
–
S
11
PARAMETER
S
2
 1
21

2
–
S
22
2

I
I
I
I
T
I
T

T

f = 1 GHz; T
E
C
C
C
C
amb
amb
s
amb
s
= 0; V
= 0.5 mA; V
= 0; V
= 1 mA; V
= 0.5 mA; V
= 
= 
= 25 C
= 25 C
= 25 C
opt
opt
CB
CB
; I
; I
C
C
= 5 V
= 1 V; f = 1 MHz
= 0.5 mA; V
= 1 mA; V
amb
CE
CE
CE
= 1 V; f = 1 GHz;
CONDITIONS
up to T
= 25 C
3
= 1 V
= 1 V; f = 1 GHz;
12
is zero and
CE
s
CONDITIONS
CE
= 170 C; note 1
= 1 V;
= 1 V; f = 1 GHz;

50

3.5



MIN.
THERMAL RESISTANCE

80
0.3
5
13
1.8
2
TYP.
Product specification
190 K/W
BFS25A
50
200
0.45




MAX.
nA
pF
GHz
dB
dB
dB
UNIT