BFR520T,115 NXP Semiconductors, BFR520T,115 Datasheet - Page 8

• Manufacturer Part Number: BFR520T,115
• Description: TRANS NPN 15V 9GHZ SOT-416
• Manufacturer: NXP Semiconductors

Specifications of BFR520T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Mounting Type: Surface Mount
• Power - Max: 150mW
• Current - Collector (ic) (max): 70mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: NPN
• Frequency - Transition: 9GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Noise Figure (db Typ @ F): 1.1dB ~ 1.6dB @ 900MHz
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage(max): 20V
• Emitter-base Voltage (max): 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-75
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934055892115::BFR520T T/R::BFR520T T/R

NXP Semiconductors
2000 Apr 03
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
Z
I
C
C
o
= 20 mA; V
= 20 mA; V
= 50 .
CE
CE
= 6 V;
= 6 V.
Fig.15 Common emitter forward transmission coefficient (s
Fig.14 Common emitter input reflection coefficient (s
180°
180°
50
0
40 MHz
−135°
−135°
135°
135°
40
0.2
0.2
0.2
30
0.5
0.5
20
0.5
3 GHz
10
−90°
−90°
90°
90°
8
1
1
1
3 GHz
2
2
2
40 MHz
5
11
−45°
−45°
45°
45°
); typical values.
21
5
5
); typical values.
MRC066
MRC067
0°
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFR520T