BFR520T,115 NXP Semiconductors, BFR520T,115 Datasheet - Page 3

• Manufacturer Part Number: BFR520T,115
• Description: TRANS NPN 15V 9GHZ SOT-416
• Manufacturer: NXP Semiconductors

Specifications of BFR520T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Mounting Type: Surface Mount
• Power - Max: 150mW
• Current - Collector (ic) (max): 70mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: NPN
• Frequency - Transition: 9GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Noise Figure (db Typ @ F): 1.1dB ~ 1.6dB @ 900MHz
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage(max): 20V
• Emitter-base Voltage (max): 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-75
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934055892115::BFR520T T/R::BFR520T T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
Notes
1. G
2. I
2000 Apr 03
R
I
h
C
C
C
f
G
s
F
P
ITO
j
CBO
T
SYMBOL
SYMBOL
FE
= 25 C unless otherwise specified.
L1
NPN 9 GHz wideband transistor
th j-s
e
c
re
UM
21
f
C
(2pq)

G
UM
2
= 20 mA; V
UM
is the maximum unilateral power gain, assuming s
= 898 MHz and at f
=
10 log
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
CE
------------------------------------------------------- - dB

= 6 V; R
1
PARAMETER
–
s
11
L
s
(2qp)
2
21
 1
= 50 ; f = 900 MHz; T

2
–
= 904 MHz.
s
22
2

PARAMETER
I
I
I
I
I
I
T
I
T
I
T
I
T

f = 900 MHz; T

f = 900 MHz; T

f = 2 GHz; T
I
f = 900 MHz; T
note 2
E
C
C
E
C
C
C
C
C
C
amb
amb
amb
amb
s
s
s
= 0; V
= i
= 20 mA; V
= i
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 
= 
= 
c
e
= 25 C
= 25 C
= 25 C
= 25 C
opt
opt
opt
= 0; V
= 0; V
amb
CE
CB
; I
; I
; I
C
C
C
= 25 C; f
= 6 V
= 6 V; f = 1 MHz
3
12
= 5 mA; V
= 20 mA; V
= 5 mA; V
amb
EB
CB
CONDITIONS
CE
CE
CE
CE
CE
CE
is zero and
amb
amb
amb
= 0.5 V; f = 1 MHz
= 6 V; f = 1 MHz
= 25 C
= 6 V
= 6 V; f = 1 GHz;
= 6 V; f = 900 MHz;
= 6 V; f = 2 GHz;
= 6 V; f = 900 MHz;
= 6 V; R
= 25 C
= 25 C
= 25 C
p
= 900 MHz; f
CE
CE
CE
L
= 6 V;
= 6 V;
= 6 V;
= 50 ;
q
= 902 MHz; measured at

60






13





MIN.
VALUE
500

120
1
0.5
0.4
9
15
9
14
1.1
1.6
1.9
17
26
TYP.
Product specification
BFR520T
50
250







1.6
2.1



MAX. UNIT
UNIT
K/W
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm