BFP 650F E6327 Infineon Technologies, BFP 650F E6327 Datasheet
BFP 650F E6327
Specifications of BFP 650F E6327
BFP650FE6327XT
SP000368489
Related parts for BFP 650F E6327
BFP 650F E6327 Summary of contents
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NPN Silicon Germanium RF Transistor* For medium power amplifiers and driver stages High OIP and P 3 -1dB Ideal for low phase noise oscilators Maxim. available Gain G ma Noise figure 1.8 GHz 70 GHz ...
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Maximum Ratings Parameter Collector-emitter voltage T > 0 ° °C A Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current 1) Total power dissipation T 85°C S Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...
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Total power dissipation P tot 550 500 450 400 350 300 250 200 150 100 [°C] S Transition frequency parameter ...
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Power gain parameter in GHz 100 120 ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 0.15 ±0.05 ±0.05 0.5 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...