BFR 750L3RH E6327 Infineon Technologies, BFR 750L3RH E6327 Datasheet - Page 5

• Manufacturer Part Number: BFR 750L3RH E6327
• Description: TRANS RF BIPO NPN 90MA TSLP-3-9
• Manufacturer: Infineon Technologies

Specifications of BFR 750L3RH E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 37GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
• Gain: 21dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 60mA, 3V
• Current - Collector (ic) (max): 90mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-9
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR750L3RHE6327INTR; BFR750L3RHE6327XT; SP000252588

Total power dissipation P
Permissible Pulse Load
P
totmax
400
350
300
250
200
150
100
10
10
10
50
0
2
1
0
10
0
−8
/ P
15
totDC
30
10
−6
=
45
( t
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
60
t
p
p
T
)
T
tp [s]
S
10
75
[°C]
−4
D=t
p
90
/T
tot
105
=
10
−2
120
( T
S
135
)
150
10
0
5
Permissible Puls Load R
Collector-base capacitance C
f = 1 MHz
0.55
0.45
0.35
0.25
0.15
0.05
10
10
10
0.6
0.5
0.4
0.3
0.2
0.1
2
1
0
10
0
0
−8
2
10
−6
4
t
p
T
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0
V
tp [s]
10
CB
6
−4
[V]
D=t
p
thJS
/T
BFR750L3RH
8
=
10
cb
2007-04-26
−2
=
( t
10
p
)
( V
10
CB
12
0
)