BFR 750L3RH E6327 Infineon Technologies, BFR 750L3RH E6327 Datasheet - Page 2

• Manufacturer Part Number: BFR 750L3RH E6327
• Description: TRANS RF BIPO NPN 90MA TSLP-3-9
• Manufacturer: Infineon Technologies

Specifications of BFR 750L3RH E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 37GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
• Gain: 21dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 60mA, 3V
• Current - Collector (ic) (max): 90mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-9
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR750L3RHE6327INTR; BFR750L3RHE6327XT; SP000252588

Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
2
C
C
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R thJA please refer to Application Note Thermal Resistance
R thJS demanded by P tot and T S , to be fulfilled by design
A
A
S
CE
CB
EB
= 3 mA, I
= 60 mA, V
> 0°C
= 0.5 V, I
= 13 V, V
= 5 V, I
0°C
96°C
B
E
= 0
C
= 0
CE
BE
= 0
= 3 V, pulse measured
= 0
1)
2)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
CES
CBO
EBO
C
B
FE
CEO
CES
CBO
EBO
tot
j
A
stg
(BR)CEO
thJS
min.
160
4
-
-
-
-65 ... 150
-65 ... 150
Values
Value
Value
360
150
typ.
250
4.7
3.5
1.2
13
13
90
150
4
9
-
-
-
BFR750L3RH
max.
100
100
400
10
2007-04-26
-
Unit
V
µA
nA
µA
-
Unit
V
mA
mW
°C
Unit
K/W