BFP540FESDE6327 Infineon Technologies, BFP540FESDE6327 Datasheet - Page 2

• Manufacturer Part Number: BFP540FESDE6327
• Description: TRANS RF NPN 4.5V 80MA TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP540FESDE6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 30GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.4dB @ 1.8GHz
• Gain: 20dB
• Power - Max: 250mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 3.5V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP540FESDE6327INTR; BFP540FESDE6327XT; SP000296093

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CB
EB
= 1 mA, I
= 20 mA, V
= 0.5 V, I
= 10 V, V
= 5 V, I
B
E
= 0
C
= 0
CE
BE
= 0
thJA
= 3.5 V, pulse measured
= 0
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
4.5
50
-
-
-
Values
Value
≤ 280
typ.
110
5
-
-
-
BFP540FESD
max.
2010-03-12
100
170
10
10
-
Unit
V
µA
nA
µA
-
Unit
K/W