BFP540FESDE6327 Infineon Technologies, BFP540FESDE6327 Datasheet

TRANS RF NPN 4.5V 80MA TSFP-4

BFP540FESDE6327

Manufacturer Part Number
BFP540FESDE6327
Description
TRANS RF NPN 4.5V 80MA TSFP-4
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP540FESDE6327

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
30GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.4dB @ 1.8GHz
Gain
20dB
Power - Max
250mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 20mA, 3.5V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Package / Case
TSFP-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP540FESDE6327INTR
BFP540FESDE6327XT
SP000296093
NPN Silicon RF Transistor*
• For ESD protected high gain low noise amplifier
• Excellent ESD performance
• Outstanding G
• SIEGET
• Pb-free (ROHS compliant) package
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP540FESD
Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
1
2
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
A
A
S
typical value 1000 V (HBM)
Noise Figure F = 0.9 dB
> 0°C
≤ 0°C
≤ 80 °C
45 - Line
ms
= 20 dB
Marking
AUs
2)
1=B
1)
2=E
Pin Configuration
3=C
1
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
4=E
-
-65 ... 150
-65 ... 150
-
Value
250
150
4
4.5
10
10
80
4
1
8
3
BFP540FESD
Package
TSFP-4
2010-03-12
1
2
Unit
V
mA
mW
°C

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BFP540FESDE6327 Summary of contents

Page 1

NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance typical value 1000 V (HBM) • Outstanding Noise Figure F = 0.9 dB  • SIEGET 45 - ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

SPICE Parameter For the SPICE model as well as for S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.model. Please consult our website and download the latest versions before actually starting your design. You find the BFP540FESD SPICE ...

Page 5

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 0.15 ±0.05 ±0.05 0.5 ...

Page 6

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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