BFP 182 E7764 Infineon Technologies, BFP 182 E7764 Datasheet
BFP 182 E7764
Specifications of BFP 182 E7764
BFP182E7764INTR
BFP182E7764XT
SP000011015
Related parts for BFP 182 E7764
BFP 182 E7764 Summary of contents
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NPN Silicon RF Transistor* For low noise, high-gain broadband amplifiers at collector currents from GHz 0 900 MHz T Pb-free (RoHS compliant) package Qualified according AEC Q101 * ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
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... TF = 6.5523 mA ITF = 1.0132 V VJC = 1.7541 MJS = 3 - XTI = All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit Transistor B’ B Chip For examples and ready to use parameters please contact your local Infineon Technologies ...
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Total power dissipation P tot 300 mW 200 150 100 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 0.05 ...
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Package Outline 0.8 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT143 2.9 ±0 0.2 +0.1 -0.05 +0.1 0.4 -0.05 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...