AT-41435G Avago Technologies US Inc., AT-41435G Datasheet - Page 3

• Manufacturer Part Number: AT-41435G
• Description: TRANS NPN BIPO 12V 60MA 35-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41435G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 4GHz
• Gain: 10dB ~ 18.5dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 8V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (35 micro-X)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 500mW
• Dc Collector Current: 600mA
• Dc Current Gain Hfe: 270
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 1.5V
• Collector Current (dc) (max): 60mA
• Dc Current Gain (min): 30
• Power Dissipation: 500mW
• Frequency (max): 8GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Package Type: Case 35 micro-X
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1856; AT-41435G

AT-41435 Typical Performance, T
3
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
V
Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. V
CE
24
21
18
15
12
16
14
12
10
9
6
3
0
8
0.5
0
= 8 V, I
NF
G
O
A
10
C
FREQUENCY (GHz)
= 10 mA.
1.0
G
A
20
I
C
CE
NF
(mA)
= 8 V.
50
2.0
30
3.0 4.0 5.0
40
NF
4.0 GHz
4.0 GHz
2.0 GHz
2.0 GHz
O
A
= 25°C
8
6
4
2
0
6
4
2
0
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector Current
and Frequency. V
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
24
20
16
12
40
35
30
25
20
15
10
8
4
5
0
= 8 V, I
0
G
P
1dB
1dB
0.1
10
C
FREQUENCY (GHz)
= 25 mA.
0.3
20
I
CE
C
0.5
(mA)
= 8 V.
|S
30
21E
1.0
MSG
|
2
MAG
40
4.0 GHz
4.0 GHz
2.0 GHz
2.0 GHz
3.0
6.0
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
V
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
CE
16
15
14
13
12
20
16
12
8
4
0
= 8 V.
0
0
NF
G
A
O
10
10
20
20
I
I
C
C
(mA)
(mA)
30
30
40
40
4.0 GHz
1.0 GHz
2.0 GHz
10 V
6 V
4 V
4 V
6 V
10 V
4
3
2
1