AT-42035G Avago Technologies US Inc., AT-42035G Datasheet - Page 2

• Manufacturer Part Number: AT-42035G
• Description: TRANS NPN BIPO 12V 80MA 35-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-42035G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 2GHz ~ 4GHz
• Gain: 10dB ~ 13.5dB
• Power - Max: 600mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (35 micro-X)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 600mW
• Dc Collector Current: 800mA
• Dc Current Gain Hfe: 270
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 516-1858; AT-42035G

AT-42035 Absolute Maximum Ratings
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 5.7 mW/°C for T
4. Storage above +150°C may tarnish the leads of this package making it difficult to
5. The small spot size of this technique results in a higher, though more accurate
Electrical Specifications, T
Notes:
1. For this test, the emitter is grounded.
2
Symbol
|S
P
G
NF
G
f
h
I
I
C
CBO
EBO
T
1 dB
FE
solder into a circuit.
determination of θ
“Thermal Resistance” for more information.
CB
1 dB
A
Symbol
21E
case
O
V
V
V
T
EBO
CBO
CEO
P
I
T
STG
|
C
T
2
j
= 25°C.
Insertion Power Gain; V
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Optimum Noise Figure: V
Gain @ NF
Gain Bandwidth Product: V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
CE
= 8 V, I
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
jc
O
C
than do alternate methods. See MEASUREMENTS section
; V
= 35 mA
CE
Parameter
c
A
= 8 V, I
> 95°C.
= 25°C
C
CE
[2,3]
Parameters and Test Conditions
= 10 mA
EB
CE
CE
= 8 V, I
[4]
CB
CE
= 1 V
[1]
= 8 V, I
= 8 V, I
[1]
= 8 V
: V
= 8 V, I
CB
C
CE
= 35 mA
C
C
= 8 V, f = 1 MHz
= 8 V, I
= 35 mA
= 10 mA
C
= 35 mA
C
Units
mW
mA
= 35 mA
°C
°C
V
V
V
[1]
-65 to 150
Maximum
Absolute
600
150
1.5
20
12
80
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Units
dBm
GHz
µA
µA
dB
dB
dB
dB
pF
—
Thermal Resistance
θ
Min.
10.0
jc
30
= 175°C/W
11.0
21.0
20.5
14.0
13.5
10.0
0.28
Typ.
150
5.0
9.5
2.0
3.0
8.0
[2,5]
Max.
:
270
0.2
2.0