BFG591,115 NXP Semiconductors, BFG591,115 Datasheet - Page 5

• Manufacturer Part Number: BFG591,115
• Description: TRANS NPN 15V 7GHZ SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BFG591,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 7GHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 70mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 70mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 7000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1985-2; 934023010115; BFG591 T/R

NXP Semiconductors
1995 Sep 04
handbook, halfpage
NPN 7 GHz wideband transistor
I
C re
(pF)
C
P tot
(W)
= 0; f = 1 MHz.
Fig.4
1.2
0.8
0.4
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0
0
Feedback capacitance as a function of
collector-base voltage, typical values.
Fig.2 Power derating curve.
50
4
100
8
150
12
V
T s (
CB
MGC792
MGC791
o
(V)
C)
200
16
5
handbook, halfpage
handbook, halfpage
V
f = 1 GHz; V
CE
(GHz)
Fig.3
h FE
250
200
150
100
f
= 12 V.
T
50
Fig.5
0
10
8
6
4
2
0
−2
1
CE
DC current gain as a function of collector
current, typical values.
= 12 V.
Transition frequency as a function of
collector current, typical values.
10
−1
10
1
I
C
Product specification
(mA)
10
I C (mA)
BFG591
MRA749
MGC793
10
10
2
2