BFG591,115 NXP Semiconductors, BFG591,115 Datasheet

TRANS NPN 15V 7GHZ SOT-223

BFG591,115

Manufacturer Part Number
BFG591,115
Description
TRANS NPN 15V 7GHZ SOT-223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG591,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
7GHz
Power - Max
2W
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 70mA, 8V
Current - Collector (ic) (max)
200mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 70mA @ 8V
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
7000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.2 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1985-2
934023010115
BFG591 T/R
Product specification
Supersedes data of November 1992
DATA SHEET
BFG591
NPN 7 GHz wideband transistor
DISCRETE SEMICONDUCTORS
1995 Sep 04

Related parts for BFG591,115

BFG591,115 Summary of contents

Page 1

DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 DISCRETE SEMICONDUCTORS 1995 Sep 04 ...

Page 2

... NXP Semiconductors NPN 7 GHz wideband transistor FEATURES  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment. QUICK REFERENCE DATA ...

Page 3

... NXP Semiconductors NPN 7 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total power dissipation tot T storage temperature stg T junction temperature j THERMAL CHARACTERISTICS ...

Page 4

... NXP Semiconductors NPN 7 GHz wideband transistor CHARACTERISTICS = 25 C (unless otherwise specified SYMBOL PARAMETER V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage (BR)CES V emitter-base breakdown voltage (BR)EBO I collector-base leakage current CBO h DC current gain FE C feedback capacitance re f transition frequency T G maximum unilateral power gain; ...

Page 5

... NXP Semiconductors NPN 7 GHz wideband transistor 3.0 P tot (W) 2.5 2.0 1.5 1.0 0 100 Fig.2 Power derating curve. 1.2 handbook, halfpage C re (pF) 0.8 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage, typical values. 1995 Sep 04 MGC791 250 handbook, halfpage h FE 200 150 ...

Page 6

... NXP Semiconductors NPN 7 GHz wideband transistor 25 handbook, halfpage gain (dB 900 MHz Fig.6 Gain as a function of collector current; typical values. 50 handbook, halfpage gain (dB MSG mA Fig.8 Gain as a function of frequency; typical values. 1995 Sep 04 MGC795 handbook, halfpage gain (dB) G max 120 I (mA GHz; V ...

Page 7

... NXP Semiconductors NPN 7 GHz wideband transistor −20 handbook, halfpage d im (dB) −30 −40 −50 −60 − 700 mV 793.25 MHz (p+q-r) Fig.9 Intermodulation distortion as a function of collector current; typical values. 1995 Sep 04 MGC797 handbook, halfpage d 2 (dB) 80 120 I (mA Fig.10 Second order Intermodulation distortion as ...

Page 8

... NXP Semiconductors NPN 7 GHz wideband transistor handbook, full pagewidth o 180 = 50  mA Fig.11 Common emitter input reflection coefficient (s handbook, full pagewidth 180 mA Fig.12 Common emitter forward transmission coefficient (s 1995 Sep 135 0.5 3 GHz 0.2 0.2 0 0.2 0.5 o 135 135 40 MHz 3 GHz ...

Page 9

... NXP Semiconductors NPN 7 GHz wideband transistor handbook, full pagewidth 180 mA Fig.13 Common emitter reverse transmission coefficient (s handbook, full pagewidth o 180 = 50  mA Fig.14 Common emitter output reflection coefficient (s 1995 Sep 135 0.5 0.4 0.3 0.2 0.1 40 MHz o o 135 135 0.5 ...

Page 10

... NXP Semiconductors NPN 7 GHz wideband transistor SPICE parameters for the BFG591 crystal SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) XTB 19 ( (1) 21 XTI 22 CJE 23 VJE 24 MJE XTF 27 VTF 28 ITF 29 PTF 30 CJC 31 VJC 32 MJC 33 XCJ 34 TR (1) 35 CJS (1) 36 VJS ...

Page 11

... NXP Semiconductors NPN 7 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package with increased heatsink; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 1995 Sep scale 0.32 6.7 3.7 7.3 4.6 2 ...

Page 12

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 13

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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