BFG541,115 NXP Semiconductors, BFG541,115 Datasheet - Page 8

• Manufacturer Part Number: BFG541,115
• Description: TRANS NPN 15V 9GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG541,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 650mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 40mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 650 mW
• Maximum Operating Temperature: + 175 C
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1984-2; 934018870115; BFG541 T/R

NXP Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
Z
I
Z
C
C
o
o
= 10 mA; V
= 10 mA; V
= 50 ; f = 900 MHz.
= 50 ; f = 2 GHz.
CE
CE
= 8 V;
= 8 V;
180°
180°
G max = 15.3 dB
0
0
−135°
−135°
G = 15 dB
135°
135°
0.2
0.2
0.2
0.2
Γ MS
G = 14 dB
0.2
0.2
G max = 8.5 dB
F min = 2.1 dB
G = 13 dB
0.5
0.5
0.5
0.5
Γ MS
Fig.14 Noise circle figure.
Fig.15 Noise circle figure.
Γ OPT
F = 2.5 dB
0.5
0.5
G = 8 dB
F = 3 dB
F = 1.5 dB
F min =
1.3 dB
G = 7 dB
Γ OPT
F = 4 dB
F = 2 dB
−90°
−90°
90°
90°
8
1
1
F = 3 dB
1
1
1
1
G = 6 dB
2
2
2
2
2
2
5
5
−45°
−45°
45°
45°
5
5
5
5
MRA668
MRA669
0°
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG541