BFG541,115 NXP Semiconductors, BFG541,115 Datasheet

TRANS NPN 15V 9GHZ SOT223

BFG541,115

Manufacturer Part Number
BFG541,115
Description
TRANS NPN 15V 9GHZ SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG541,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
650mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 40mA @ 8V
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.12 A
Power Dissipation
650 mW
Maximum Operating Temperature
+ 175 C
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1984-2
934018870115
BFG541 T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG541
NPN 9 GHz wideband transistor
Product specification
September 1995

Related parts for BFG541,115

BFG541,115 Summary of contents

Page 1

DATA SHEET BFG541 NPN 9 GHz wideband transistor Product specification DISCRETE SEMICONDUCTORS September 1995 ...

Page 2

... NXP Semiconductors NPN 9 GHz wideband transistor FEATURES  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc ...

Page 3

... NXP Semiconductors NPN 9 GHz wideband transistor QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CES I DC collector current C P total power dissipation tot h DC current gain FE C feedback capacitance re f transition frequency T G maximum unilateral power gain UM S  ...

Page 4

... NXP Semiconductors NPN 9 GHz wideband transistor CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C emitter capacitance e C collector capacitance c C feedback capacitance re f transition frequency T G maximum unilateral power gain UM (note 1) S  2 insertion power gain ...

Page 5

... NXP Semiconductors NPN 9 GHz wideband transistor 1000 handbook, halfpage P tot (mW) 800 600 400 200 100  Fig.2 Power derating curve. 1.0 handbook, halfpage C re (pF) 0.8 0.6 0.4 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage. September 1995 MRA654 - 1 handbook, halfpage h FE ...

Page 6

... NXP Semiconductors NPN 9 GHz wideband transistor In Figs maximum power gain; MSG = UM maximum stable gain maximum available gain. max 25 handbook, halfpage gain (dB max MSG 900 MHz. CE Fig.6 Gain as a function of collector current. 50 handbook, halfpage gain (dB MSG mA Fig.8 Gain as a function of frequency. September 1995 ...

Page 7

... NXP Semiconductors NPN 9 GHz wideband transistor –20 handbook, halfpage d im (dB) –30 –40 –50 –60 – Fig.10 Intermodulation distortion as a function of collector current. 5 handbook, halfpage F min (dB ass 2000 MHz 2 F min 1000 MHz 900 MHz 1 500 MHz Fig.12 Minimum noise figure and associated available gain as functions of collector current ...

Page 8

... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° G max = 15 mA  900 MHz handbook, full pagewidth 180° mA  GHz September 1995 90° 1 135° min = 1.3 dB Γ OPT Γ MS 0.2 0 1 0.5 −135° 1 −90° ...

Page 9

... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° mA  Fig.16 Common emitter input reflection coefficient (S handbook, full pagewidth 180° mA Fig.17 Common emitter forward transmission coefficient (S September 1995 90° 1 135° 0.5 3 GHz 0.2 0.2 0 MHz 0.2 0.5 − ...

Page 10

... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° mA Fig.18 Common emitter reverse transmission coefficient (S handbook, full pagewidth 180° mA  Fig.19 Common emitter output reflection coefficient (S September 1995 90° 135° 0.5 0.4 0.3 0.2 0.1 40 MHz −135° ...

Page 11

... NXP Semiconductors NPN 9 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package with increased heatsink; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 September 1995 scale 0.32 6.7 3.7 7.3 4.6 2 ...

Page 12

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 13

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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