BFT25A,215 NXP Semiconductors, BFT25A,215 Datasheet - Page 3

• Manufacturer Part Number: BFT25A,215
• Description: TRANS NPN 5V 5GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFT25A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 0.5mA @ 1V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.0065 A
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 5V
• Collector-base Voltage: 8V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 6.5mA
• Dc Current Gain (min): 50
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1992-2; 934008580215; BFT25A T/R

Philips Semiconductors
6. Thermal characteristics
7. Characteristics
9397 750 13399
Product data sheet
Table 6:
[1]
Table 7:
T
[1]
Symbol
R
Symbol
I
h
f
C
G
F
CBO
T
j
FE
th(j-s)
re
UM
= 25 C unless otherwise specified.
T
G
G
s
UM
UM
is the temperature at the soldering point of the collector tab.
is the maximum unilateral power gain, assuming S
=
Parameter
collector cut-off
current
DC current gain
transition
frequency
feedback
capacitance
maximum
unilateral power
gain
noise figure
Thermal characteristics
Characteristics
10 log
Parameter
from junction to soldering point
------------------------------------------------------dB
1
–
S
11
Rev. 04 — 6 July 2004
S
2
21
1
Conditions
I
I
I
T
f = 500 MHz
I
f = 1 MHz
I
T
V
T
V
T
2
E
C
C
C
C
–
amb
amb
amb
amb
CE
CE
=
=
= 0 A; V
= 0.5 mA; V
= 0.5 mA; V
= 1 mA; V
= i
S
= 1 V;
= 1 V;
22
c
= 25 C;
= 25 C; f = 1 GHz
opt
= 25 C; f = 1 GHz
opt
= 25 C; f = 1 GHz
= 0 A; V
2
; I
; I
C
C
CB
= 0.5 mA;
= 1 mA;
CE
= 5 V
CE
CE
CB
= 1 V;
= 1 V;
= 1 V
= 1 V;
Conditions
12
is zero and
[1]
Min
-
50
3.5
-
-
-
-
NPN 5 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
-
80
5
0.3
15
1.8
2
[1]
Typ
260
BFT25A
Max
50
200
-
0.45
-
-
-
Unit
K/W
Unit
nA
GHz
pF
dB
dB
dB
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