BFT25A,215 NXP Semiconductors, BFT25A,215 Datasheet

BFT25A,215

Manufacturer Part Number

BFT25A,215

Description

TRANS NPN 5V 5GHZ SOT-23

Manufacturer

NXP Semiconductors

Datasheet

1.BFT25A215.pdf (14 pages)

Specifications of BFT25A,215

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

Frequency - Transition

5GHz

Noise Figure (db Typ @ F)

1.8dB ~ 2dB @ 1GHz

Power - Max

32mW

Dc Current Gain (hfe) (min) @ Ic, Vce

50 @ 500µA, 1V

Current - Collector (ic) (max)

6.5mA

Mounting Type

Surface Mount

Dc Collector/base Gain Hfe Min

Dc Current Gain Hfe Max

50 @ 0.5mA @ 1V

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Maximum Operating Frequency

5000 MHz (Typ)

Collector- Emitter Voltage Vceo Max

5 V

Emitter- Base Voltage Vebo

2 V

Continuous Collector Current

0.0065 A

Power Dissipation

32 mW

Maximum Operating Temperature

+ 175 C

Number Of Elements

Collector-emitter Voltage

Collector-base Voltage

Emitter-base Voltage

Collector Current (dc) (max)

6.5mA

Dc Current Gain (min)

Frequency (max)

5GHz

Operating Temp Range

-65C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

TO-236AB

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gain

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

568-1992-2
934008580215
BFT25A T/R

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1. Product proﬁle

1.1 General description

1.2 Features

1.3 Quick reference data

The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power

ampliﬁers, such as pocket telephones and paging systems with signal frequencies up

to 2 GHz.

The transistor is encapsulated in a 3-pin plastic SOT23 envelope.

Table 1:

[1]

Symbol

CBO

CEO

tot

BFT25A

NPN 5 GHz wideband transistor

Rev. 04 — 6 July 2004

Low current consumption (100 A to 1 mA)

Low noise ﬁgure

Gold metallization ensures excellent reliability.

is the temperature at the soldering point of the collector tab.

Quick reference data

Parameter

collector-base

voltage

collector-emitter

voltage

DC collector

current

total power

dissipation

DC current gain

transition

frequency

maximum

unilateral power

gain

noise ﬁgure

Conditions

open emitter

open base

up to T

f = 500 MHz

f = 1 GHz

amb

= 0.5 mA; V

= 1 mA; V

= 0.5 mA; V

= 1 V;

= 25 C;

opt

= 25 C; f = 1 GHz

opt

= 25 C; f = 1 GHz

; I

= 165 C

= 0.5 mA;

= 1 mA;

= 1 V;

= 1 V

= 1 V;

[1]

Min

3.5

Product data sheet

Typ

1.8

Max

6.5

200

Unit

GHz

Related parts for BFT25A,215

BFT25A,215 Summary of contents

Page 1

BFT25A NPN 5 GHz wideband transistor Rev. 04 — 6 July 2004 1. Product proﬁle 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power ampliﬁers, such as pocket telephones and paging ...

Page 2

Philips Semiconductors 2. Pinning information Table 2: Pin Code: V10 Ordering information Table 3: Type number BFT25A 4. Marking Table 4: Type number BFT25A [ Made in Hong Kong ...

Page 3

Philips Semiconductors 6. Thermal characteristics Table 6: Symbol R th(j-s) [ the temperature at the soldering point of the collector tab Characteristics Table unless otherwise speciﬁed. j Symbol I CBO h ...

Page 4

Philips Semiconductors 40 P tot (mW 100 Fig 1. Power derating curve. 0 (pF) 0.3 0.2 0 MHz. C ...

Page 5

Philips Semiconductors gain (dB MSG 0.5 1 500 MHz. CE Fig 5. Gain as a function of collector current. 50 gain (dB ...

Page 6

Philips Semiconductors 4 F (dB Fig 9. Minimum noise ﬁgure as a function of collector current. Fig 11. Noise circle ﬁgure. 9397 750 13399 Product data sheet mcd145 ...

Page 7

Philips Semiconductors Table 8: f (MHz) 500 Fig 12. Noise circle ﬁgure. Table 9: f (MHz) 1000 9397 750 13399 Product data sheet Noise parameters V (V) I (mA 1.9 0.5 pot. unst. region 0.2 ...

Page 8

Philips Semiconductors Fig 13. Noise circle ﬁgure. Table 10: f (MHz) 2000 9397 750 13399 Product data sheet pot. unst. region 0.5 MSG 7 0.2 0 0.2 0.5 See Table 10; ...

Page 9

Philips Semiconductors Fig 14. Common emitter input reﬂection coefﬁcient (S Fig 15. Common emitter forward transmission coefﬁcient (S 9397 750 13399 Product data sheet 0.5 0.2 j 0.2 0 0.2 0 ...

Page 10

Philips Semiconductors Fig 16. Common emitter reverse transmission coefﬁcient (S Fig 17. Common emitter output reﬂection coefﬁcient (S 9397 750 13399 Product data sheet 135 180 0.5 0.4 0.3 0.2 0.1 135 mA. ...

Page 11

Philips Semiconductors 8. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig ...

Page 12

Philips Semiconductors 9. Revision history Table 11: Revision history Document ID Release date BFT25A_4 20040706 • Modiﬁcations: Converted from Lotus Manuscript format to TDM format. • Marking code added. BFT25A_CNV_3 19971205 9397 750 13399 Product data sheet Data sheet status ...

Page 13

Philips Semiconductors 10. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualiﬁcation III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 14

Philips Semiconductors 14. Contents 1 Product proﬁ 1.1 General description ...

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