BFT93,215 NXP Semiconductors, BFT93,215 Datasheet - Page 7
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BFT93,215
Manufacturer Part Number
BFT93,215
Description
TRANS PNP 12V 5GHZ SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BFT93215.pdf
(10 pages)
Specifications of BFT93,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2.4dB @ 500MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 30mA, 5V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
50
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
5 GHz
Collector- Emitter Voltage Vceo Max
- 12 V
Emitter- Base Voltage Vebo
- 2 V
Continuous Collector Current
- 35 mA
Power Dissipation
300 mW
Number Of Elements
1
Collector-emitter Voltage
12V
Collector-base Voltage
15V
Emitter-base Voltage
2V
Collector Current (dc) (max)
35mA
Dc Current Gain (min)
20
Frequency (max)
5GHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1993-2
933347740215
BFT93 T/R
933347740215
BFT93 T/R
NXP Semiconductors
PACKAGE OUTLINE
November 1992
PNP 5 GHz wideband transistor
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
7
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
Product specification
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
BFT93
SOT23