BFT93,215 NXP Semiconductors, BFT93,215 Datasheet - Page 2
![TRANS PNP 12V 5GHZ SOT-23](/photos/5/24/52425/nxp_sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
BFT93,215
Manufacturer Part Number
BFT93,215
Description
TRANS PNP 12V 5GHZ SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BFT93215.pdf
(10 pages)
Specifications of BFT93,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2.4dB @ 500MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 30mA, 5V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
50
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
5 GHz
Collector- Emitter Voltage Vceo Max
- 12 V
Emitter- Base Voltage Vebo
- 2 V
Continuous Collector Current
- 35 mA
Power Dissipation
300 mW
Number Of Elements
1
Collector-emitter Voltage
12V
Collector-base Voltage
15V
Emitter-base Voltage
2V
Collector Current (dc) (max)
35mA
Dc Current Gain (min)
20
Frequency (max)
5GHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1993-2
933347740215
BFT93 T/R
933347740215
BFT93 T/R
NXP Semiconductors
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR93 and
BFR93A.
QUICK REFERENCE DATA
Note
1. T
November 1992
V
V
I
P
f
C
G
F
V
c
T
CBO
CEO
tot
o
PNP 5 GHz wideband transistor
re
UM
SYMBOL
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain I
noise figure
output voltage
PARAMETER
PINNING
PIN
1
2
3
open emitter
open base
up to T
I
T
I
T
I
T
d
V
f
C
C
C
C
(pqr)
im
base
emitter
collector
j
amb
amb
CE
= 25 C
= 30 mA; V
= 2 mA; V
= 30 mA; V
= 10 mA; V
= 60 dB; I
Code: X1p
= 5 V; R
= 25 C
= 25 C
= 493.25 MHz
DESCRIPTION
s
= 95 C; note 1
2
CE
L
C
CONDITIONS
CE
CE
CE
= 75 ;
= 30 mA;
= 5 V; f = 1 MHz
= 5 V; f = 500 MHz;
= 5 V; f = 500 MHz;
= 5 V; f = 500 MHz;
lfpage
Top view
1
Fig.1 SOT23.
5
1
16.5
2.4
300
Product specification
TYP.
3
MSB003
15
12
35
300
MAX.
BFT93
2
V
V
mA
mW
GHz
pF
dB
dB
mV
UNIT