AT-32033-TR1G Avago Technologies US Inc., AT-32033-TR1G Datasheet - Page 4

IC TRANS NPN BIPOLAR SOT-23

AT-32033-TR1G

Manufacturer Part Number
AT-32033-TR1G
Description
IC TRANS NPN BIPOLAR SOT-23
Manufacturer
Avago Technologies US Inc.
Datasheets

Specifications of AT-32033-TR1G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Noise Figure (db Typ @ F)
1dB ~ 1.3dB @ 900MHz
Gain
11dB ~ 12.5dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 2mA, 2.7V
Current - Collector (ic) (max)
32mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
5.5V
Transition Frequency Typ Ft
10GHz
Power Dissipation Pd
200mW
Dc Collector Current
32mA
Dc Current Gain Hfe
70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1566-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-32033-TR1G
Manufacturer:
TI
Quantity:
2 906
Part Number:
AT-32033-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Company:
Part Number:
AT-32033-TR1G
Quantity:
229
AT-32011, AT-32033 Typical Performance
Figure 8. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
Figure 11. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
25
20
15
10
Figure 14. AT-32011 Noise Figure and
Associated Gain at V
I
Circuit, Figure 1. (Circuit Losses
De-embedded).
5
0
C
-50
-2.5
= 2 mA vs. Temperature in Test
7.5
2.5
20
15
10
10
-5
-5
5
0
5
0
0
0
TEMPERATURE (°C)
0.5
0.5
2 mA
5 mA
10 mA
20 mA
2 mA
5 mA
0
FREQUENCY (GHz)
FREQUENCY (GHz)
NF
1.0
1.0
Ga
CE
50
1.5
1.5
= 2.7 V,
CE
CE
2.0
2.0
= 5 V.
= 1 V.
100
2.5
2.0
1.5
1.0
0.5
0
2.5
2.5
Figure 9. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V
Figure 12. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V
Figure 15. AT-32033 Noise Figure and
Associated Gain at V
I
Circuit, Figure 1. (Circuit Losses
De-embedded).
C
CE
CE
= 2 mA vs. Temperature in Test
25
20
15
10
20
15
10
5
0
20
15
10
= 5 V.
= 1 V.
5
0
-50
5
0
0
0
0.5
2 mA
5 mA
0.5
2 mA
5 mA
10 mA
20 mA
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
0
1.0
1.0
NF
Ga
CE
1.5
1.5
= 2.7 V,
50
2.0
2.0
100
2.5
2.5
2.5
2.0
1.5
1.0
0.5
0
Figure 10. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V
Figure 13. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V
Figure 16. AT-32011 and AT-32033
Third Order Intercept vs. Frequency
and Bias at V
Tuning.
CE
CE
20
15
10
= 5 V.
= 1 V.
5
0
4
25
20
15
10
20
15
10
0
5
0
5
0
0
0
0.5
2 mA
5 mA
10 mA
20 mA
0.5
0.5
2 mA
5 mA
10 mA
20 mA
2 mA
5 mA
CE
FREQUENCY (GHz)
FREQUENCY (MHz)
FREQUENCY (GHz)
= 2.7 V, with Optimal
1.0
1.0
1.0
1.5
1.5
1.5
2.0
2.0
2.0
2.5
2.5
2.5

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