BFR106,215 NXP Semiconductors, BFR106,215 Datasheet - Page 4

• Manufacturer Part Number: BFR106,215
• Description: TRANS NPN 15V 5GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFR106,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 3.5dB @ 800MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 9V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 50mA @ 9V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1987-2; 933806990215; BFR106 T/R

NXP Semiconductors
September 1995
handbook, halfpage
1/2 page (Datasheet)
NPN 5 GHz wideband transistor
V
(GHz)
Fig.4
(mW)
P tot
CE
T f
= 9 V; f = 500 MHz; T
600
400
200
4
8
6
2
0
0
0
0
Transition frequency as a function of
collector current.
Fig.2 Power derating curve.
50
40
j
= 25 C.
100
80
150
I
C
T
MEA398 - 1
s
(mA)
MBB773
( C)
o
120
200
22 mm
4
handbook, halfpage
handbook, halfpage
Fig.3
I
Fig.5
G UM
h FE
V
C
(dB)
CE
= 30 mA; V
120
80
40
= 9 V; T
40
30
20
10
0
0
10
0
DC current gain as a function of collector
current.
Maximum unilateral power gain as a
function of frequency.
amb
CE
= 6 V; T
= 25 C.
10
40
amb
2
= 25 C.
10
80
3
Product specification
I
f (MHz)
C
(mA)
BFR106
MBB774
MEA399
120
10
4