BFR106,215 NXP Semiconductors, BFR106,215 Datasheet - Page 3

• Manufacturer Part Number: BFR106,215
• Description: TRANS NPN 15V 5GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFR106,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 3.5dB @ 800MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 9V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 50mA @ 9V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1987-2; 933806990215; BFR106 T/R

NXP Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. I
3. d
September 1995
I
h
f
C
C
C
G
F
d
V
R
j
CBO
T
FE
2
SYMBOL
SYMBOL
= 25 C unless otherwise specified.
o
th j-s
c
e
re
NPN 5 GHz wideband transistor
UM
f
C
(pq)
G
im
s
UM
= 30 mA; V
UM
is the temperature at the soldering point of the collector tab.
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
= 810 MHz; V
=
10 log
thermal resistance from junction to
soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
second order intermodulation
distortion
output voltage
CE
--------------------------------------------------------- - dB.

= 6 V; R
1
–
o
PARAMETER
= 100 mV.
S
PARAMETER
11
S
L
2
 1
21
= 75 ; T

2
C
–
= 50 mA; V
S
22
amb
2

= 25 C;
CE
I
I
I
T
I
I
I
I
T
I
T
note 2
note 3
= 9 V; R
E
C
C
E
C
C
C
C
amb
amb
amb
= 0; V
= i
= 50 mA; V
= 50 mA; V
= i
= 0; V
= 30 mA; V
= 30 mA; V
up to T
e
c
= 25 C
= 25 C
= 25 C
= 0; V
= 0; V
L
CB
CE
3
= 75 ; T
12
s
= 10 V
= 10 V; f = 1 MHz
CONDITIONS
CB
EB
= 70 C; note 1
is zero and
CE
CE
CE
CE
CONDITIONS
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
= 9 V
= 9 V; f = 500 MHz;
= 6 V; f = 800 MHz;
= 6 V; f = 800 MHz;
amb
= 25 C; f
(pqr)
= 793.25 MHz.

25








MIN.
THERMAL RESISTANCE

80
5
1.5
4.5
1.2
11.5
3.5
50
350
TYP. MAX.
Product specification
210 K/W
BFR106
100









nA
GHz
pF
pF
pF
dB
dB
dB
mV
UNIT