BFS17W,115 NXP Semiconductors, BFS17W,115 Datasheet - Page 3

• Manufacturer Part Number: BFS17W,115
• Description: TRANS NPN 15V 1GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS17W,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1.6GHz
• Noise Figure (db Typ @ F): 4.5dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 2mA @ 1V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 1600 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 25
• Frequency (max): 1.6GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1990-2; 934022860115; BFS17W T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
1995 Sep 04
R
I
h
f
C
C
C
F
handbook, halfpage
SYMBOL
SYMBOL
j
CBO
T
FE
= 25 C (unless otherwise specified).
NPN 1 GHz wideband transistor
th j-s
c
e
re
(mW)
P tot
s
400
300
200
100
is the temperature at the soldering point of the collector pin.
0
0
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
noise figure
Fig.2 Power derating curve.
50
PARAMETER
100
PARAMETER
150
T
s
MLB587
( C)
o
I
I
I
f = 500 MHz
I
f = 1 MHz
I
f = 1 MHz
I
f = 1 MHz; T
I
f = 500 MHz; 
E
C
C
E
C
B
C
200
= 0; V
= 2 mA; V
= 25 mA; V
= i
= i
= i
= 2 mA; V
e
b
c
= 0; V
= 0; V
= 0; V
CONDITIONS
CB
= 10 V
3
CB
EB
CE
amb
CE
CE
CE
handbook, halfpage
S
= 0.5 V;
= 1 V
= 10 V;
= 5 V;
= 5 V;
= 25 C
= 5 V;
= 
V
CE
up to T
h FE
Fig.3
opt
= 1 V.
60
40
20
0
10
−1
s
DC current gain as a function of collector
current; typical values.
= 118 C; note 1
CONDITIONS

25





MIN.
1

90
1.6
0.8
2
0.75
4.5
TYP.
10
Product specification
10


1.5



VALUE
I C (mA)
MAX.
190
BFS17W
MBG237
10
nA
GHz
pF
pF
pF
dB
2
UNIT
UNIT
K/W