BFS17W,115 NXP Semiconductors, BFS17W,115 Datasheet

TRANS NPN 15V 1GHZ SOT323

BFS17W,115

Manufacturer Part Number
BFS17W,115
Description
TRANS NPN 15V 1GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFS17W,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.6GHz
Noise Figure (db Typ @ F)
4.5dB @ 500MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 2mA, 1V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
25 @ 2mA @ 1V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
1600 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.05 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 175 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
25V
Emitter-base Voltage
2.5V
Collector Current (dc) (max)
50mA
Dc Current Gain (min)
25
Frequency (max)
1.6GHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1990-2
934022860115
BFS17W T/R
Product specification
Supersedes data of November 1992
DATA SHEET
BFS17W
NPN 1 GHz wideband transistor
DISCRETE SEMICONDUCTORS
1995 Sep 04

Related parts for BFS17W,115

BFS17W,115 Summary of contents

Page 1

DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 DISCRETE SEMICONDUCTORS 1995 Sep 04 ...

Page 2

... NXP Semiconductors NPN 1 GHz wideband transistor APPLICATIONS Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION Silicon NPN transistor in a plastic SOT323 (S-mini) package. The BFS17W uses the same crystal as the SOT23 version, BFS17. QUICK REFERENCE DATA SYMBOL ...

Page 3

... NXP Semiconductors NPN 1 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to soldering point th j-s Note the temperature at the soldering point of the collector pin. s CHARACTERISTICS = 25 C (unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE f transition frequency ...

Page 4

... NXP Semiconductors NPN 1 GHz wideband transistor 2 handbook, halfpage C re (pF) 1 MHz Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. 20 handbook, halfpage F (dB −3 −2 − Fig.6 Minimum noise figure as function of frequency; typical values. 1995 Sep 04 MBG238 handbook, halfpage (V) T MBG240 ...

Page 5

... NXP Semiconductors NPN 1 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 1995 Sep scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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