BLF6G10LS-200,118 NXP Semiconductors, BLF6G10LS-200,118 Datasheet - Page 24

• Manufacturer Part Number: BLF6G10LS-200,118
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20.2dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060895118; BLF6G10LS-200 /T3; BLF6G10LS-200 /T3

Wireless connectivity
Wireless connectivity: Wi-Fi (802.11)
Performance comparison: BGW200 vs. BGW211
4
Product
BGW211
BGW200
Frequency bands
Modulations
Data rates
Transmit power (15 dBm)
Receive power
Standard
compliance
802.11g
802.11b
External
components
required
0
3
Design
footprint
(mm
BGW200
2.4 to 2.5 GHz
DBPSK, DQPSK, CCK (DSSS)
1, 2, 5.5, 11 Mbps
731 mW
415 mW
2
150
180
)
Standby
power
consumption
< 2 mW
< 2 mW
Bluetooth
1.1/1.2
coexistence QoS
•
•
•
•
ARM7
processor Integrated memory
•
•
BGW211
2.4 to 2.5 GHz
DBPSK, DQPSK, CCK (DSSS), OFDM
1, 2, 5.5 Mbps (802.11b)
6, 9, 12, 18, 24, 36, 48, 54 Mbps (802.11g)
550 mW (802.11b)
600 mW (802.11g)
300 mW (802.11b)
400 mW (802.11g)
1.25-MB SRAM
256-KB ROM
1.25-MB SRAM
256-KB ROM
Host
interfaces
Optimized
SDIO/SPI
Optimized
SDIO/SPI
SiP package
dimensions (mm)
10 x 15 x 1.3
10 x 15 x 1.3
Pins
68
68