BLF6G10LS-200,118 NXP Semiconductors, BLF6G10LS-200,118 Datasheet - Page 23

• Manufacturer Part Number: BLF6G10LS-200,118
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20.2dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060895118; BLF6G10LS-200 /T3; BLF6G10LS-200 /T3

Wired connectivity: 1394
Product
PDI1394P25
PDI1394L40
Description
Physical layer interface (PHY)
A/V link
1394-1995 & 1394a compliance
•
•
Operation
400 Mbps
Ports
1
Open HCI
•
IEC61883
•
Package
LQFP64
LQFP144