BLF6G10LS-200,112 NXP Semiconductors, BLF6G10LS-200,112 Datasheet - Page 38

IC BASESTATION FINAL SOT502B

BLF6G10LS-200,112

Manufacturer Part Number
BLF6G10LS-200,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BLF6G10LS-200,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
20.2dB
Voltage - Rated
65V
Current Rating
49A
Current - Test
1.4A
Voltage - Test
28V
Power - Output
40W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
49 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060895112
BLF6G10LS-200
BLF6G10LS-200
PCI Express PHYs and channel switches
PCI Express solutions

Product
PX1011A-EL1
PX1011A-EL1/G
PX1012A-EL1
PX1012A-EL1/G
Description
x1 PCI Express physical layer device, compliant with
PCI Express specification v1.0a and v1.1
x1 PCI Express physical layer device, compliant with
PCI Express Specification v1.0a and v1.1
x1 PCI Express physical layer device, compliant with
PCI Express Specification v1.0a and v1.1, for use with
PLDA PCI Express IP core
x1 PCI Express physical layer device, compliant with
PCI Express Specification v1.0a and v1.1, for use with
PLDA PCI Express IP core
Target applications
PC plug-in cards, embedded systems,
ExpressCards
PC plug-in cards, embedded systems,
ExpressCards
PC plug-in cards, embedded systems,
ExpressCards
PC plug-in cards, embedded systems,
ExpressCards
Package
LFBGA81, leaded
LFBGA81, lead-free
LFBGA81, leaded
LFBGA81, lead-free
Power
<300 mW
<300 mW
<300 mW
<300 mW
Availability
Sampling
Sampling
Sampling
Sampling

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