BLF6G10LS-200,112 NXP Semiconductors, BLF6G10LS-200,112 Datasheet - Page 33

• Manufacturer Part Number: BLF6G10LS-200,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20.2dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060895112; BLF6G10LS-200; BLF6G10LS-200

Wideband variable gain amplifiers
Timers
SA5209
SA5209/01 D (SO16)
SA5219
SA5219/01 D (SO16)
ICM7555C/01
ICM7555CN/01 N (DIP8)
ICM7555I/01
ICM7555I/01
AU7555/01
D (SO16)
D (SO16)
D (SO8)
D (SO8)
N (DIP8)
D (SO8)
-40 to +85
-40 to +85
-40 to +85
-40 to +85
-40 to +125
-40 to +85
-40 to +85
0 to +70
0 to +70
4.5 to 7.0
4.5 to 7.0
4.5 to 7.0
4.5 to 7.0
3 to 16
3 to 16
3 to 16
3 to 16
3 to 16
38 / 48
38 / 48
36 / 50
36 / 50
1160
1160
780
780
780
1100
1100
1100
1100
CMOS, TTL
CMOS, TTL
CMOS, TTL
CMOS, TTL
CMOS, TTL
850
850
700
700
≥ 500
≥ 500
≥ 500
≥ 500
≥ 500
17 / 21
17 / 21
18 / 22
18 / 22
0.65
0.65
0.65
0.65
0.65
16 / 22
16 / 22
22 / 28
22 / 28
0.31
0.31
0.31
0.31
0.31
20 / 45
20 / 45
18 / 45
18 / 45
50
50
50
50
50
9.3
9.3
9.3
9.3
50
50
50
50
50
-60
-60
-60
-60
100
100
100
100
100
-10
-10
-10
-10
0.4 / 1.0
0.4 / 1.0
0.4 / 1.0
0.4 / 1.0
0.4 / 1.0
-3
-3
-3
-3
45 / 75
45 / 75
45 / 75
45 / 75
45 / 75
+5
+5
+5
+5
20 / 75
20 / 75
20 / 75
20 / 75
20 / 75
+13
+13
+13
+13