BF 5020W H6327 Infineon Technologies, BF 5020W H6327 Datasheet - Page 6
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BF 5020W H6327
Manufacturer Part Number
BF 5020W H6327
Description
MOSFET N-CH 8V 25MA SOT343
Manufacturer
Infineon Technologies
Datasheet
1.BF_5020W_H6327.pdf
(11 pages)
Specifications of BF 5020W H6327
Transistor Type
N-Channel
Frequency
800MHz
Gain
26dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.2dB
Current - Test
10mA
Voltage - Test
5V
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Details
Drain current I
V
AGC characteristic AGC = ƒ(V
f = 800 MHz
measured in test circuit, see page 7
DS
mA
dB
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
= 5 V, R
28
24
22
20
18
16
14
12
10
8
6
4
2
0
0
0.5
0
Rg1=120KOHm
0.5
1
G1
D
1
1.5
= Parameter in kΩ
= ƒ(V
1.5
2
G2S
2
Rg1=82KOHm
120K
2.5
)
82K
2.5
3
G2S
3
V
)
V
V
V
G2S
G2S
4
4
6
AGC characteristic AGC = ƒ(V
f = 50 MHz
measured in test circuit, see page 7
Crossmodulation V
V
measured in test circuit, see page 7
DS
dBµV
dB
107
104
103
102
101
100
-20
-30
-40
-50
-60
-70
-80
= 5 V
99
98
97
96
95
94
93
92
0
0.5
0
Rg=120KOHm
5
1
10
RG1=82KOHm_22m
1.5
15
20
unw
2
Rg=82KOHm
25
RG1=120KOHm_15m
= (AGC)
2.5
30
35
3
BF5020...
2009-10-01
G2S
40 dB
V
)
V
AGC
G2S
50
4