BF 5020W H6327 Infineon Technologies, BF 5020W H6327 Datasheet - Page 2
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BF 5020W H6327
Manufacturer Part Number
BF 5020W H6327
Description
MOSFET N-CH 8V 25MA SOT343
Manufacturer
Infineon Technologies
Datasheet
1.BF_5020W_H6327.pdf
(11 pages)
Specifications of BF 5020W H6327
Transistor Type
N-Channel
Frequency
800MHz
Gain
26dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.2dB
Current - Test
10mA
Voltage - Test
5V
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Details
Thermal Resistance
Parameter
Channel - soldering point
BF5020, BF5020R
BF5020W
Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+I
Gate2-source breakdown voltage
+I
Gate1-source leakage current
V
Gate2-source leakage current
V
Drain current
V
Drain-source current
V
Gate1-source pinch-off voltage
V
Gate2-source pinch-off voltage
V
1
D
For calculation of R
G1S
G2S
DS
DS
DS
DS
G1S
G2S
= 20 µA, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, I
= 6 V, V
= 6 V, V
= 10 mA, V
= 10 mA, V
D
G1S
G2S
G2S
G1S
G2S
G1S
= 20 µA, V
thJA
= 0 , V
= 4 V, R
= 4 V, I
= 0 , V
G2S
G1S
= 0 , V
= 0 , V
please refer to Application Note Thermal Resistance
= 0 , V
= 0 , V
G2S
G2S
D
G1S
DS
DS
1)
G1
= 20 µA
= 0
= 0
= 4 V
DS
DS
= 120 kΩ
= 0
= 2 V
A
= 0
= 0
= 25°C, unless otherwise specified
2
Symbol
V
+V
+V
+I
+I
I
I
V
V
Symbol
R
DSS
DSX
(BR)DS
G1S(p)
G2S(p)
thchs
G1SS
G2SS
(BR)G1SS
(BR)G2SS
min.
12
6
6
-
-
-
-
-
-
Values
Value
≤ 370
≤ 280
typ.
0.7
0.7
14
-
-
-
-
-
-
max.
100
15
15
50
50
BF5020...
2009-10-01
-
-
-
-
Unit
V
nA
mA
V
Unit
K/W