BF 999 E6327 Infineon Technologies, BF 999 E6327 Datasheet - Page 5

• Manufacturer Part Number: BF 999 E6327
• Description: MOSFET N-CH RF 20V 30MA SOT-23
• Manufacturer: Infineon Technologies

Specifications of BF 999 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: N-Channel
• Frequency: 45MHz
• Gain: 27dB
• Voltage - Rated: 20V
• Current Rating: 30mA
• Noise Figure: 2.1dB
• Current - Test: 10mA
• Voltage - Test: 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6.5 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Channel Type: N
• Drain Source Voltage (max): 20V
• Power Gain (typ)@vds: 27@10VdB
• Noise Figure (max): 2.1(Typ)dB
• Frequency (max): 300MHz
• Package Type: SOT-23
• Pin Count: 3
• Forward Transconductance (typ): 0.02S
• Input Capacitance (typ)@vds: 2.5@10VpF
• Output Capacitance (typ)@vds: 0.9@10VpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BF999E6327XT; SP000010985

Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.4
1) Lead width can be 0.6 max. in dambar area
0.25
+0.1
-0.05
1)
Package SOT23
M
Pin 1
B C
2.9
1
1.9
4
±0.1
EH
0.8
3
3.15
2
0.95
0.9
C
0.8
1.2
B
s
5
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
1.15
0.2
M
A
1
±0.1
0.1 MAX.
A
2007-04-20
BF999