BF 999 E6327 Infineon Technologies, BF 999 E6327 Datasheet
BF 999 E6327
Specifications of BF 999 E6327
SP000010985
Related parts for BF 999 E6327
BF 999 E6327 Summary of contents
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Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BF999 LBs Maximum Ratings Parameter Drain-source voltage ...
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Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ Gate-source breakdown voltage mA Gate-source leakage current ...
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Total power dissipation P 250 mW 150 100 Gate transconductance -0 Output characteristics I tot ...
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Gate input capacitance Output capacitance C gss dss 2007-04-20 BF999 ) ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...