BF 5030W E6327 Infineon Technologies, BF 5030W E6327 Datasheet - Page 7
![MOSFET N-CH 8V 25MA SOT-343](/photos/5/32/53227/448-sot-343_sml.jpg)
BF 5030W E6327
Manufacturer Part Number
BF 5030W E6327
Description
MOSFET N-CH 8V 25MA SOT-343
Manufacturer
Infineon Technologies
Datasheet
1.BF_5030W_E6327.pdf
(13 pages)
Specifications of BF 5030W E6327
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
N-Channel
Frequency
800MHz
Gain
24dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.3dB
Current - Test
10mA
Voltage - Test
3V
Configuration
Single Dual Gate
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BF5030WE6327XT
SP000101236
SP000101236
Drain current I
R
V
Noise figure F = ƒ (V
V
… V
G1
mA
dB
DS
DS
DS
= Parameter in kΩ
26
22
20
18
16
14
12
10
8
6
4
2
0
8
4
2
0
0
0
= 5 V, V
= 3 V, … V
= 3 V, V
1
D
1
G2S
G2S
= ƒ(V
2
DS
= 4 V, R
= 3 V, R
G2S
= 5 V
GG
3
2
), f = 45 MHz
)
g1
g1
4
68k
82k
100k
120k
= 180 kΩ
= 82 kΩ
V
V
100k
120k
150k
180k
V
V
GG
G2S
=V
6
4
DS
7
Power gain G
V
… V
Noise figure F = ƒ (V
V
… V
DS
DS
dB
DS
DS
dB
-10
-20
40
20
10
0
8
4
2
0
0
0
= 5 V, V
= 5 V, V
= 3 V, V
= 3 V, V
ps
1
1
G2S
G2S
G2S
G2S
= ƒ (V
= 3 V, R
= 4 V, R
= 3 V, R
= 4 V, R
G2S
G2S
2
2
), f = 800 MHz
), f = 45 MHz
g1
g1
g1
g1
= 180 kΩ
= 180 kΩ
= 82 kΩ
= 82 kΩ
BF5030...
2009-05-05
V
V
V
V
G2S
G2S
4
4