BF 5030W E6327 Infineon Technologies, BF 5030W E6327 Datasheet - Page 7

• Manufacturer Part Number: BF 5030W E6327
• Description: MOSFET N-CH 8V 25MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BF 5030W E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 10mA
• Voltage - Test: 3V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BF5030WE6327XT; SP000101236

Drain current I
R
 V
Noise figure F = ƒ (V
 V
… V
G1
mA
dB
DS
DS
DS
= Parameter in kΩ
26
22
20
18
16
14
12
10
8
6
4
2
0
8
4
2
0
0
0
= 5 V, V
= 3 V, … V
= 3 V, V
1
D
1
G2S
G2S
= ƒ(V
2
DS
= 4 V, R
= 3 V, R
G2S
= 5 V
GG
3
2
), f = 45 MHz
)
g1
g1
4
68k
82k
100k
120k
= 180 kΩ
= 82 kΩ
V
V
100k
120k
150k
180k
V
V
GG
G2S
=V
6
4
DS
7
Power gain G
 V
… V
Noise figure F = ƒ (V
 V
… V
DS
DS
dB
DS
DS
dB
-10
-20
40
20
10
0
8
4
2
0
0
0
= 5 V, V
= 5 V, V
= 3 V, V
= 3 V, V
ps
1
1
G2S
G2S
G2S
G2S
= ƒ (V
= 3 V, R
= 4 V, R
= 3 V, R
= 4 V, R
G2S
G2S
2
2
), f = 800 MHz
), f = 45 MHz
g1
g1
g1
g1
= 180 kΩ
= 180 kΩ
= 82 kΩ
= 82 kΩ
BF5030...
2009-05-05
V
V
V
V
G2S
G2S
4
4