BF 5030W E6327 Infineon Technologies, BF 5030W E6327 Datasheet - Page 6
![MOSFET N-CH 8V 25MA SOT-343](/photos/5/32/53227/448-sot-343_sml.jpg)
BF 5030W E6327
Manufacturer Part Number
BF 5030W E6327
Description
MOSFET N-CH 8V 25MA SOT-343
Manufacturer
Infineon Technologies
Datasheet
1.BF_5030W_E6327.pdf
(13 pages)
Specifications of BF 5030W E6327
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
N-Channel
Frequency
800MHz
Gain
24dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.3dB
Current - Test
10mA
Voltage - Test
3V
Configuration
Single Dual Gate
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BF5030WE6327XT
SP000101236
SP000101236
Gate 1 current I
V
V
Drain current I
V
V
G2S
G2S
mA
µA
DS
200
100
DS
50
32
24
20
16
12
= Parameter
= Parameter
0
8
4
0
0
0
= 3 V, … V
= 3 V, … V
0.2
0.5
0.4
D
G1
= ƒ(V
0.6
1
DS
DS
= ƒ(V
0.8
= 5 V
= 5 V
G1S
1.5
G1S
1
)
)
1.2
2
1.4
1.5V
4V
3V
V
2.5V
1.5V
1V
1V
V
V
V
2.5V
3V
G1S
G1S
3V
2V
3.5V
2.5V
2V
4V
3V
2V
1.8
3
6
Gate 1 forward transconductance
g
V
Drain current I
V
… V
fs
= ƒ(I
mS
mA
DS
DS
DS
60
50
45
40
35
30
25
20
15
10
14
10
5
0
8
6
4
2
0
0
0
= 5 V, V
= 3 V, … V
= 3 V, V
D
),V
5
G2S
1
1.5V
10
D
G2S
G2S
= Parameter
= ƒ(V
DS
1.5V
15
= 3 V, R
= 4 V, R
2
= 5 V
GG
20
)
3
25
g1
3V
2V
g1
2V
= 180 kΩ
= 82 kΩ
2.5V
BF5030...
2009-05-05
30
V
4V
mA
3V
ID
V
GG
40
5