BF 2030W E6814 Infineon Technologies, BF 2030W E6814 Datasheet - Page 4

• Manufacturer Part Number: BF 2030W E6814
• Description: MOSFET N-CH 8V 40MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BF 2030W E6814

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 23dB
• Voltage - Rated: 8V
• Current Rating: 40mA
• Noise Figure: 1.5dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.04 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 23@5VdB
• Noise Figure (max): 2.2dB
• Frequency (max): 1GHz
• Package Type: SOT-343
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.031S
• Input Capacitance (typ)@vds: 2.4@5V@Gate 1pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BF2030WE6814XT; SP000012223

Total power dissipation P
BF2030, BF2030R
Drain current I
V
G2S
mW
mA
220
180
160
140
120
100
80
60
40
20
28
24
22
20
18
16
14
12
10
= 4V
0
8
6
4
2
0
0
0
15
10
30
20
D
45
30
= (I
60
40
G1
75
50
)
90 105 120 °C
60
tot
= (T
70
80 µA
S
)
T
I
G1
S
150
100
4
Total power dissipation P
BF2030W
Output characteristics I
V
V
G2S
G1S
mA
mA
220
180
160
140
120
100
80
60
40
20
20
16
14
12
10
= 4V
= Parameter
0
8
6
4
2
0
0
0
15
1
30
2
45
3
60
4
75
5
D
90 105 120 °C
=
tot
6
= (T
(V
7
BF2030...
2007-04-20
DS
8
S
)
1.4V
)
1.3V
1.2V
1.1V
T
V
1V
0.8V
V
S
DS
150
10