BF 2030W E6814 Infineon Technologies, BF 2030W E6814 Datasheet - Page 3

• Manufacturer Part Number: BF 2030W E6814
• Description: MOSFET N-CH 8V 40MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BF 2030W E6814

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 23dB
• Voltage - Rated: 8V
• Current Rating: 40mA
• Noise Figure: 1.5dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.04 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 23@5VdB
• Noise Figure (max): 2.2dB
• Frequency (max): 1GHz
• Package Type: SOT-343
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.031S
• Input Capacitance (typ)@vds: 2.4@5V@Gate 1pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BF2030WE6814XT; SP000012223

Electrical Characteristics at T
Parameter
AC Characteristics
Forward transconductance
V
Gate1 input capacitance
V
f = 10 MHz
Output capacitance
V
f = 10 MHz
Power gain
V
f = 800 MHz
Noise figure
V
f = 800 MHz
Gain control range
V
DS
DS
DS
DS
DS
DS
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, V
D
D
D
D
D
G2S
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 4...0 V, f = 800 MHz
(verified by random sampling)
G2S
G2S
G2S
G2S
G2S
= 4 V
= 4 V,
= 4 V,
= 4 V,
= 4 V,
A
= 25°C, unless otherwise specified
3
Symbol
g
C
C
G
F
fs
G
g1ss
dss
p
p
min.
27
20
40
-
-
-
Values
typ.
2.4
1.3
1.5
31
23
50
max.
2.8
2.2
BF2030...
2007-04-20
-
-
-
-
Unit
mS
pF
dB
dB