BF 2030 E6814 Infineon Technologies, BF 2030 E6814 Datasheet - Page 5
![MOSFET N-CH 8V 40MA SOT-143](/photos/5/22/52282/448-sot-143_sml.jpg)
BF 2030 E6814
Manufacturer Part Number
BF 2030 E6814
Description
MOSFET N-CH 8V 40MA SOT-143
Manufacturer
Infineon Technologies
Datasheet
1.BF_2030_E6814.pdf
(11 pages)
Specifications of BF 2030 E6814
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel
Frequency
800MHz
Gain
23dB
Voltage - Rated
8V
Current Rating
40mA
Noise Figure
1.5dB
Current - Test
10mA
Voltage - Test
5V
Configuration
Single Dual Gate
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.04 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BF2030E6814XT
SP000012219
SP000012219
Gate 1 current I
V
V
Drain current I
V
V
DS
G2S
DS
G2S
mA
µA
210
180
165
150
135
120
105
= 5V
= 5V
90
75
60
45
30
15
30
24
22
20
18
16
14
12
10
= Parameter
= Parameter
0
8
6
4
2
0
0
0
0.2 0.4 0.6 0.8
0.4
0.8
D
G1
=
= (V
1.2
(V
G1S
1
1.6
G1S
1.2 1.4 1.6
)
)
2
4V
4V
3.5V
2.4 V
3V
3V
2.5V
V
V
2V
V
DS
G1S
2V
1.5V
3
2
5
Gate 1 forward transconductance
g
V
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
fs
DS
DS
=
mS
mA
= 5V, V
= 5V, V
40
30
25
20
15
10
13
11
10
5
0
9
8
7
6
5
4
3
2
1
0
0
0
(I
D
0.5
)
4
G2S
G2S
1
D
8
2V
= Parameter
= 4V, R
1.5
=
12
2
(V
2.5V
GG
2.5
G1
16
)
= 100k
3
20
3.5
3V
BF2030...
2007-04-20
24 mA
4
I
V
4V
D
V
GG
30
5