MRF7S38075HSR5 Freescale Semiconductor, MRF7S38075HSR5 Datasheet - Page 7

• Manufacturer Part Number: MRF7S38075HSR5
• Description: MOSFET RF N-CH 12W 30V NI-780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S38075HSR5

• Transistor Type: N-Channel
• Frequency: 3.4GHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 900mA
• Voltage - Test: 30V
• Power - Output: 12W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
17
16
15
14
13
12
10
11
9
8
1
1
V
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
Figure 7. Intermodulation Distortion Products
G
Figure 10. Power Gain and Drain Efficiency
DD
η
ps
D
= 30 Vdc, I
3rd Order
P
versus CW Output Power
P
7th Order
out
DQ
out
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) PEP
versus Output Power
=900 mA
5th Order
T
C
= −30_C
25_C
85_C
10
10
V
I
f = 3500 MHz
DQ
35
30
25
20
15
10
DD
5
0
1
= 900 mA
= 30 Vdc
Figure 9. WiMAX, ACPR, Power Gain and Drain
V
f = 3500 MHz, 802.16d, 64 QAM
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
G
DD
ps
TYPICAL CHARACTERISTICS
= 30 Vdc, I
−30_C
P
Efficiency versus Output Power
100
out
100
85_C
, OUTPUT POWER (WATTS) AVG. WiMAX
25_C
DQ
200
= 900 mA
200
45
40
35
30
25
20
15
10
5
0
10
3
/
4
−10
−20
−30
−40
−50
−60
14
13
12
10
0
11
9
1
0
IM7 −U
Figure 8. Intermodulation Distortion Products
V
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 3500 MHz
IM3 −U
IM3 −L
DD
Figure 11. Power Gain versus Output Power
= 30 Vdc, P
I
f = 3500 MHz
DQ
ACPR
IM7 −L
= 900 mA
IM5 −U
η
D
P
out
out
versus Tone Spacing
TWO −TONE SPACING (MHz)
MRF7S38075HR3 MRF7S38075HSR3
, OUTPUT POWER (WATTS) CW
= 84 W (PEP), I
40
100
IM5 −L
−25
−30
−35
−40
−45
−50
−55
−60
10
DQ
= 900 mA
80
V
DD
= 28 V
30 V
32 V
100
120
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