MRF7S38075HSR5 Freescale Semiconductor, MRF7S38075HSR5 Datasheet
MRF7S38075HSR5
Specifications of MRF7S38075HSR5
Available stocks
Related parts for MRF7S38075HSR5
MRF7S38075HSR5 Summary of contents
Page 1
... MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor = 30 Volts 900 mA, P ...
Page 2
... Vdc 2 2.7 3.5 Vdc 0.1 0.21 0.3 Vdc — 0.77 — pF — 464 — pF — 214 — Avg 3400 MHz and f = out 7.5 8.7 — dB — dBc — (continued) RF Device Data Freescale Semiconductor ...
Page 3
... MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) 1. RCE = 20Log(EVM/100) RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) (continued) C Symbol DD Mask Point B at 3.5 MHz Offset Point MHz Offset Point ...
Page 4
... Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, ε Description 2743019447 ATC100B2R7BT500XT ATC100B101FT500XT EMVY350ADA221MHA0G MCHT101M1HB - 1017 - RF EKME630ELL471MK25S C1825C103J5RAC CRCW12061803FKEA V SUPPLY + + + C10 C11 OUTPUT Z16 Z17 Z18 Z19 Z20 Z21 Z22 C4 = 2.55 r Part Number Manufacturer Fair Rite ATC ATC Nippon Chemi - Con Multicomp Multicomp Kemet Vishay RF Device Data Freescale Semiconductor RF ...
Page 5
... C12 Figure 2. MRF7S38075HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C2 C6 C10 C11 C4 MRF7S38705 Rev. C MRF7S38075HR3 MRF7S38075HSR3 5 ...
Page 6
... Watts Avg. out −8 −38 −12 −40 IRL −42 −16 −20 −44 −46 −24 3575 3600 = 23 Watts Avg. out = 30 Vdc 900 450 mA DQ 1125 mA 1350 mA 900 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power RF Device Data Freescale Semiconductor 200 ...
Page 7
... 3500 MHz OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Two −Tone Measurements −10 (f1 + f2)/2 = Center Frequency of 3500 MHz −20 IM3 −L −30 IM3 −U −40 IM7 −U −50 − ...
Page 8
... Point D −110 −9 −7.2 Figure 14. WiMAX Spectrum Mask Specifications 230 250 = 14%. 7 MHz Channel BW System Type G Point B Point B Point C Point C −5.4 −3.6 −1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor Point D 7.2 9 ...
Page 9
... Z o Figure 15. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z source f = 3600 MHz f = 3600 MHz Z load f = 3400 MHz Vdc 900 mA Avg out source MHz W 3400 20.70 + j14.63 5.63 - j5.17 3425 20.22 + j12.38 5.44 - j5.10 3450 19.02 + j10.82 5.23 - j4.97 3475 17 ...
Page 10
... U − − − 0.040 − − − 1.02 Z − − − 0.030 − − − 0.76 aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE RF Device Data Freescale Semiconductor ...
Page 11
... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Aug. 2007 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S38075HR3 MRF7S38075HSR3 11 ...
Page 12
... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...