MRF7S38075HSR5 Freescale Semiconductor, MRF7S38075HSR5 Datasheet - Page 6

• Manufacturer Part Number: MRF7S38075HSR5
• Description: MOSFET RF N-CH 12W 30V NI-780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S38075HSR5

• Transistor Type: N-Channel
• Frequency: 3.4GHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 900mA
• Voltage - Test: 30V
• Power - Output: 12W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF7S38075HR3 MRF7S38075HSR3
6
16
15
14
13
12
10
11
9
I
DQ
1125 mA
450 mA
900 mA
675 mA
Figure 5. Two - Tone Power Gain versus
= 1350 mA
1
P
V
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
out
DD
, OUTPUT POWER (WATTS) PEP
= 30 Vdc, I
Output Power
DQ
Figure 3. WiMAX Broadband Performance @ P
Figure 4. WiMAX Broadband Performance @ P
= 900 mA
15.5
14.5
13.5
12.5
11.5
14.5
13.5
12.5
11.5
10
15
14
13
12
15
14
13
12
11
3400
3400
V
64 QAM
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
η
DD
G
D
ps
= 30 Vdc, P
3425
3425
3
V
64 QAM
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
/
TYPICAL CHARACTERISTICS
DD
4,
4 Bursts, 7 MHz Channel Bandwidth, Input
= 30 Vdc, P
3450
3450
out
100
3
/
ACPR−U
= 23 W (Avg.), I
ACPR−U
4,
ACPR −L
4 Bursts, 7 MHz Channel Bandwidth, Input
3475
3475
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
200
out
= 12 W (Avg.), I
3500
3500
DQ
IRL
ACPR −L
= 900 mA, 802.16d
3525
3525
−50
−10
−20
−30
−40
DQ
= 900 mA, 802.16d
1
Figure 6. Third Order Intermodulation Distortion
3550
3550
V
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
675 mA
DD
I
η
DQ
D
= 30 Vdc, I
out
out
3575
3575
= 450 mA
900 mA
= 12 Watts Avg.
= 23 Watts Avg.
G
IRL
P
ps
out
3600
3600
DQ
, OUTPUT POWER (WATTS) PEP
versus Output Power
16
14
12
10
24
22
20
18
−47
−49
−51
−53
−55
−38
−40
−42
−44
−46
= 900 mA
1350 mA
10
−8
−12
−16
−20
−24
−8
−12
−16
−20
−24
Freescale Semiconductor
1125 mA
RF Device Data
100
200