MRF7S16150HSR3 Freescale Semiconductor, MRF7S16150HSR3 Datasheet - Page 9

• Manufacturer Part Number: MRF7S16150HSR3
• Description: MOSFET RF N-CH NI-780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S16150HSR3

• Transistor Type: N-Channel
• Frequency: 1.6GHz
• Gain: 19.7dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.5A
• Voltage - Test: 28V
• Power - Output: 32W
• Package / Case: NI-780S
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 32W
• Power Gain (typ)@vds: 19.7dB
• Frequency (min): 1.6GHz
• Frequency (max): 1.7GHz
• Package Type: NI-780S
• Pin Count: 3
• Input Capacitance (typ)@vds: 363@28VpF
• Output Capacitance (typ)@vds: 585@28VpF
• Reverse Capacitance (typ): 1.09@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 25.4%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier OFDM/WIMAX
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Figure 15. Series Equivalent Source and Load Impedance
Input
Matching
Network
Z
Z
f = 1700 MHz
Z
source
load
load
1500
1520
1540
1560
1580
1600
1620
1640
1660
1680
1700
MHz
f
V
f = 1700 MHz
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
source
1.09 - j3.76
1.06 - j3.62
1.04 - j3.48
1.01 - j3.34
0.99 - j3.21
0.96 - j3.07
0.94 - j2.94
0.92 - j2.81
0.90 - j2.69
0.88 - j2.56
0.86 - j2.44
f = 1500 MHz
Z
DQ
source
Device
Under
Test
W
Z
= 1500 mA, P
source
Z
o
= 5 Ω
Z
out
load
f = 1500 MHz
= 32 W Avg.
1.00 - j2.35
0.96 - j2.19
0.93 - j2.03
0.91 - j1.88
0.88 - j1.74
0.86 - j1.60
0.83 - j1.46
0.81 - j1.33
0.79 - j1.20
0.77 - j1.07
0.76 - j0.95
Z
load
W
Output
Matching
Network
MRF7S16150HR3 MRF7S16150HSR3
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